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MUBW 20-06 A7
Output Inverter T1 - T6
Equivalent Circuits for Simulation
Symbol
Conditions
Maximum Ratings
Conduction
V CES
V GES
V GEM
T VJ = 25 ° C to 150 ° C
Continuous
Transient
600
± 20
± 30
V
V
V
I C25
I C80
RBSOA
t SC
(SCSOA)
P tot
T C = 25 ° C
T C = 80 ° C
V GE = ± 15 V; R G = 47 ? ; T VJ = 125 ° C
Clamped inductive load; L = 100 μH
V CE = V CES ; V GE = ± 15 V; R G = 47 ? ; T VJ = 125 ° C
non-repetitive
T C = 25 ° C
35
25
I CM = 40
V CEK ≤ V CES
10
125
A
A
A
μs
W
D11 - D16
Rectifier Diode (typ. at T J = 125 ° C)
V 0 = 1.12V; R 0 = 0.11 m ?
T1 - T6 / D1 - D6
IGBT (typ. at V GE = 15 V; T J = 125 ° C)
V 0 = 0.9 V; R 0 = 65 m ?
Free Wheeling Diode (typ. at T J = 125 ° C)
V 0 = 1.09 V; R 0 = 12 m ?
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
T7 / D7
IGBT (typ. at V GE = 15 V; T J = 125 ° C)
V 0 = 0.99 V; R 0 = 81 m ?
V CE(sat)
V GE(th)
I CES
I C = 20 A; V GE = 15 V; T VJ = 25 ° C
T VJ = 125 ° C
I C = 0.5 mA; V GE = V CE
V CE = V CES ; V GE = 0 V; T VJ = 25 ° C
4.5
1.9
2.2
2.3
6.5
0.6
V
V
V
mA
Free Wheeling Diode (typ. at T J = 125 ° C)
V 0 = 1.07 V; R 0 = 23 m ?
Thermal Response
T VJ = 125 ° C
0.4
mA
I GES
t d(on)
V CE = 0 V; V GE = ± 20 V
50
200
nA
ns
t r
t d(off)
t f
E on
E off
C ies
Q Gon
R thJC
Inductive load, T VJ = 125 ° C
V CE = 300 V; I C = 20 A
V GE = ±15 V; R G = 47 ?
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 300V; V GE = 15 V; I C = 20 A
(per IGBT)
55
300
30
0.92
0.68
1100
65
ns
ns
ns
mJ
mJ
pF
nC
1 K/W
D11 - D16
Rectifier Diode (typ.)
C th1 = 0.106 J/K; R th1 = 1.06 K/W
C th2 = 0.79 J/K; R th2 = 0.239 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
Output Inverter D1 - D6
C th1 = 0.108 J/K; R th1 = 0.79 K/W
C th2 = 0.921 J/K; R th2 = 0.209 K/W
Symbol
Conditions
Maximum Ratings
Free Wheeling Diode (typ.)
I F25
I F80
T C = 25 ° C
T C = 80 ° C
35
24
A
A
C th1 = 0.065 J/K; R th1 = 1.766 K/W
C th2 = 0.636 J/K; R th2 = 0.344 K/W
T7 / D7
IGBT (typ.)
Symbol
Conditions
Characteristic Values
min. typ. max.
C th1 = 0.077 J/K; R th1 = 1.111 K/W
C th2 = 0.732 J/K; R th2 = 0.279 K/W
V F
I RM
t rr
I F = 20 A; V GE = 0 V; T VJ = 25 ° C
T VJ = 125 ° C
I F = 15 A; di F /dt = -400 A/μs; T VJ = 125 ° C
V R = 300 V; V GE = 0 V
1.4
13
90
2.1
V
V
A
ns
Free Wheeling Diode (typ.)
C th1 = 0.043 J/K; R th1 = 2.738 K/W
C th2 = 0.54 J/K; R th2 = 0.462 K/W
R thJC
(per diode)
2.1 K/W
? 2001 IXYS All rights reserved
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